N ion implantation into Fe and Co films using plasma based ion implantation
نویسندگان
چکیده
منابع مشابه
Ablation plasma ion implantation experiments: Measurement of Fe implantation into Si
Experiments have been performed demonstrating the feasibility of direct implantation of laser-ablated metal ions into a substrate. Initial experiments implanted iron ions into silicon substrates at pulsed, bias voltages up to negative 10 kV. Implantation of Fe ions into Si was confirmed by cross-sectional transmission electron microscopy and x-ray photoelectron spectroscopy. The 7.6 nm depth of...
متن کاملPlasma-based ion implantation and deposition:
After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implanta...
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Plasma immersion ion implantation from a BF3 plasma into crystalline (100) silicon was performed using the PULSION plasma doping tool. Implanted boron profiles were measured with the SIMS method and simulated using models with different levels of sophistication. The physical implantation model is based on an analytical energy distribution for ions from the plasma and uses a Monte-Carlo simulati...
متن کاملPlasma-based ion implantation utilising a cathodic arc plasma
Plasma-based ion implantation (PBII) is usually carried out with isotropic gaseous plasmas, such as a discharge in nitrogen. More recently, it has been applied using drifting plasmas, such as those produced by cathodic arcs, in order to allow efficient implantation of metallic species. The condensable nature of a cathodic arc plasma allows for the deposition of ion-stitched thin film coatings, ...
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ژورنال
عنوان ژورنال: Transactions of the Materials Research Society of Japan
سال: 2016
ISSN: 1382-3469,2188-1650
DOI: 10.14723/tmrsj.41.313